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 FUJITSU SEMICONDUCTOR DATA SHEET
DS06-20208-3E
Semicustom
CMOS
Standard cell array
CS91 Series
DESCRIPTION
The CS91 series 0.11 m CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16 ps, resulting in both integration and speed about three times higher than conventional products.
FEATURES
* Technology * * * * * * * * * * * * * * * * : 0.11 m silicon-gate CMOS, 5- to 8-layer wiring (Copper is used as wire material.) , Low-K (2.7) Inter-layer material (Inter-layer material that has low permittivity) Support for high speed, high integration, low leak internal cell set. Capable of incorporating on the same chip. Supply voltage : +1.2 V 0.1 V (standard specification) Junction temperature range : -40 C to +125 C Gate delay time : tpd = 16 ps (1.2 V, inverter, F/O = 1) Gate power consumption : Pd = 6.6 nW/MHz/BC (1.2 V, inverter, F/O = 1) Support for ultra high speed (622 Mbps to 780 Mbps, 2.5 Gbps to 3.125 Gbps, 10 Gbps) interface macros for transmission Special interfaces* : P-CML, LVDS, PCI, SSTL, HSTL, T-LVTTL, and others. Buffer cell dedicated to crystal oscillator IP macros* : CPU (ARM9, ARM7TDMI) , DSP, PCI, IEEE1394, USB, IrDA, PLL, ADC, DAC, and others. Compiled cells (RAM/ROM/multiplier, and others.) Uses industry standard tools and supports the optimum tools for the application Short-term development using a physical prototyping tool Hierarchical design environment for supporting large-scale circuits Support for SIGNAL INTEGRITY, EMI noise reduction Support for High resolution RC extraction base delay calculation environment Support for optimization environment of power supply wire (Continued)
Copyright(c)2002-2006 FUJITSU LIMITED All rights reserved
CS91 Series
(Continued) * Support for static timing sign off * Support for memory (RAM/ROM) BIST * Support for boundary SCAN * Support for LOGIC BIST * A variety of package options* : FCBGA (2116 pin Max) , EBGA, FBGA, and others. * : Including items under development.
MACRO LIBRARY (Including macros being prepared)
1.
* * * * * * * * * *
Logic cells (about 400 types)
Adder AND-OR Inverter Clock Buffer Latch NAND AND NOR SCAN Flip Flop ENOR AND-OR * * * * * * * * * Decoder Non-SCAN Flip Flop Inverter Buffer OR-AND Inverter OR Selector EOR Others
2. IP macros
CPU/DSP Ultra high speed I/F macros Interface macros Multimedia processing macros Mixed signal macros Compiled macros PLL ARM9, ARM7TDMI, Communications DSP, DSP for AV 622 Mbps to 780 Mbps, 2.5 Gbps to 3.125 Gbps, 10 Gbps PCI, IEEE1394, USB, IrDA, etc. JPEG, MPEG, etc. ADC, DAC, OPAMP, etc. RAM, ROM, multiplier, adder, multiplier-accumulator, etc. Analog PLL, digital PLL
3. Special I/O interface macros
* T-LVTTL * LVDS * SSTL * PCI * HSTL * USB * P-CML
2
CS91 Series
COMPILED CELLS
Compiled cells are macro cells which are automatically generated with the bit/word configuration specified. The CS91 series has the following types of compiled cells. (Note that each macro is different in word/bit range depending on the column type.)
1. Clock synchronous single-port RAM (1 address : 1 RW)
Column type 4 16 Memory capacity 32 to 128 K 2176 to 288 K Word range 16 to 1 K 1088 to 8 K Bit range 2 to 128 2 to 36 Unit bit bit
2. Clock synchronous dual-port RAM (2 addresses : 2 RW)
Column type 4 16 Memory capacity 32 to 288 K 128 to 288 K Word range 16 to 2 K 64 to 8 K Bit range 2 to 144 2 to 36 Unit bit bit
3. Clock synchronous ROM
Column type 16 64 Memory capacity 256 to 1 M 1024 to 1 M Word range 128 to 8 K 512 to 32 K Bit range 2 to 128 2 to 32 Unit bit bit
4. High-capacity memory type of clock synchronous single port RAM (1 address : 1 RW)
Column type 32 Memory capacity 16 K to 4 M Word range 8 K to 32 K Bit range 2 to 128 Unit bit
3
CS91 Series
ABSOLUTE MAXIMUM RATINGS
(VSS = 0 V) Parameter Symbol Application VDDI (Internal) Power supply voltage VDD VDDE (External 2.5 V) VDDE (External 3.3 V) 1.2 V Input voltage*1 VI 2.5 V 3.3 V 1.2 V Output voltage VO 2.5 V 3.3 V Storage temperature TST Plastic package L type simultaneous switching noise : minimum, delay : long Output current*2 IO M type simultaneous switching noise : small, delay : middle H type simultaneous switching noise : middle, delay : short *1 : Values are determined separately for LVDS, etc. *2 : Maximum output current which can be supplied constantly. WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. Rating Min - 0.5 - 0.5 - 0.5 - 0.5 - 0.5 - 0.5 - 0.5 - 0.5 - 0.5 -55 Max + 1.8 + 3.6 + 4.0 VDDI + 0.5 ( 1.8 V) VDDE + 0.5 ( 3.6 V) VDDE + 0.5 ( 4.0 V) VDDI + 0.5 ( 1.8 V) VDDE + 0.5 ( 3.6 V) VDDE + 0.5 ( 4.0 V) +125 25 25 25 Unit V V V V V V V V V C mA mA mA
4
CS91 Series
RECOMMENDED OPERATING CONDITIONS
* Single power supply (VDD = 1.2 V 0.1 V) Parameter Power supply voltage "H" level input voltage "L" level input voltage Junction temperature Symbol VDD VIH VIL Tj Value Min 1.1 VDD x 0.7 -0.3 -40 Typ 1.2 Max 1.3 VDD + 0.3 VDD x 0.3 +125 (VSS = 0 V) Unit V V V C
* Dual power supply (VDDE = 3.3 V 0.3 V, VDDI = 1.2 V 0.1 V) Parameter Power supply voltage "H" level input voltage "L" level input voltage Junction temperature 3.3 V supply voltage 1.2 V supply voltage 3.3 V CMOS level 1.2 V CMOS level 3.3 V CMOS level 1.2 V CMOS level Symbol VDDE VDDI VIH VIL Tj Value Min 3.0 1.1 2.0 VDDI x 0.7 -0.3 -0.3 -40 Typ 3.3 1.2 Max 3.6 1.3 VDDE + 0.3 VDDI + 0.3 +0.8 VDDI x 0.3 +125
(VSS = 0 V) Unit V V V V V V C (VSS = 0 V) Value Typ 2.5 1.2 Max 2.7 1.3 VDDE + 0.3 VDDI + 0.3 +0.7 VDDI x 0.3 +125 Unit V V V V V V C
* Dual power supply (VDDE = 2.5 V 0.2 V, VDDI = 1.2 V 0.1 V) Parameter Power supply voltage "H" level input voltage "L" level input voltage Junction temperature 2.5 V supply voltage 1.2 V supply voltage 2.5 V CMOS level 1.2 V CMOS level 2.5 V CMOS level 1.2 V CMOS level Symbol VDDE VDDI VIH VIL Tj
Min 2.3 1.1 1.7 VDDI x 0.7 -0.3 -0.3 -40
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device's electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand.
5
CS91 Series
ELECTRICAL CHARACTERISTICS
* Single power supply : VDD = 1.2 V (VDD = 1.2 V 0.1 V, VSS = 0 V, Tj = -40 C to +125 C) Parameter "H" level output voltage "L" level output voltage Input leakage current* Pull-up/pull-down resistance *: Symbol VOH VOL IL RP Condition IOH = -100 A IOL = 100 A Pull-up : VIL = 0 Pull-down : VIH = VDD Value Min VDD - 0.2 0 Typ 12 Max VDD 0.2 10 Unit V V A k
The input leakage current may exceed the above value when the input buffer with pull-up/pull-down resistor is used. * Dual power supply : VDDE = 3.3 V, VDDI = 1.2 V (VDDE = 3.3 V 0.3 V, VDDI = 1.2 V 0.1 V, VSS = 0 V, Tj = -40 C to +125 C) Parameter Symbol VOH4 VOH2 VOL4 VOL2 IL Condition IOH = -100 A IOH = -100 A IOL = 100 A IOL = 100 A 3.3 V Pull-up : VI = 0 Pull-down : VI = VDDE 1.2 V Pull-up : VI = 0 Pull-down : VI = VDDI Value Min VDDE - 0.2 VDDI - 0.2 0 0 15 Typ 33 Max VDDE VDDI 0.2 0.2 10 70 Unit V V V V A k
"H" level output voltage "L" level output voltage Input leakage current*
Pull-up/pull-down resistance
RP
12
k
*:
The input leakage current may exceed the above value when the input buffer with pull-up/pull-down resistor is used.
6
CS91 Series
* Dual power supply : VDDE = +2.5 V, VDDI = +1.2 V (VDDE = 2.5 V 0.2 V, VDDI = 1.2 V 0.1 V, VSS = 0 V, Tj = -40 C to +125 C) Parameter "H" level output voltage "L" level output voltage Input leakage current* Symbol VOH3 VOH2 VOL3 VOL2 IL Condition IOH = -100 A IOH = -100 A IOL = 100 A IOL = 100 A 2.5 V Pull-up : VI = 0 Pull-down : VI = VDDE 1.2 V Pull-up : VI = 0 Pull-down : VI = VDDI Value Min VDDE - 0.2 VDDI - 0.2 0 0 Typ 25 Max VDDE VDDI 0.2 0.2 10 Unit V V V V A k
Pull-up/pull-down resistance
RP
12
k
*:
The input leakage current may exceed the above value when the input buffer with pull-up/pull-down resistor is used.
AC CHARACTERISTICS
Parameter Delay time Symbol tpd*1 Rating Min typ*2 x tmin*3 Typ typ*2 x ttyp*3 Max typ*2 x tmax*3 Unit ns
*1 : Delay time = Propagation delay time, Enable time, Disable time *2 : "typ" is calculated from the cell specification. *3 : Measurement conditions Measurement condition VDD = 1.2 V 0.1 V, VSS = 0 V, T j = -40 C to +125 C Note : Reference values. The values according to the cell. tmin 0.65 ttyp 1.00 tmax 1.66
7
CS91 Series
INPUT/OUTPUT PIN CAPACITANCE
(f = 1 MHz, VDD = VDI = 0 V, Tj = +25 C) Parameter Input pin Output pin Input/output pin Symbol CIN COUT CI/O Value 16 Max 16 Max 16 Max Unit pF pF pF
Note : Capacitance values according to the package and the location of the pin.
DESIGN METHOD
Fujitsu's Reference Design Flow provides the following functions that shorten the development time of large scale and high quality LSIs. * High reliability design estimation in the early stage of physical design realized by physical prototyping. * Layout synthesis with optimized timing realized by physical synthesis tools. * High accuracy design environment considering drop in power supply voltage, signal noise, delay penalty, and crosstalk. * I/O design environment (power line design, assignment and selection of I/Os, package selection) considering noise.
PACKAGES
A variety of package types Development of chips with narrow-pitch solder bump technology and high-pin count packages enables users to respond to the high-pin count, high-speed requirements of the network market. A variety of packages from existing series are also available for smooth transition from previously developed models. Contact your FUJITSU representative for availability dates. FCBGA package EBGA package FBGA package QFP package : maximum 2116 pins : maximum 672 pins : maximum 304 pins : maximum 304 pins
8
CS91 Series
FUJITSU LIMITED
All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of Fujitsu semiconductor device; Fujitsu does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. Fujitsu assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of Fujitsu or any third party or does Fujitsu warrant non-infringement of any third-party's intellectual property right or other right by using such information. Fujitsu assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that Fujitsu will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan. Edited Business Promotion Dept.
F0609


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